IRS2153DSTRPBF vs IRS2153DSPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRS2153DSTRPBF sa pamamagitan ng Infineon at IRS2153DSPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRS2153DSTRPBF IRS2153DSPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Topolohiya Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
Packhaging 8-pin SOIC 8-SOIC (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -40C to +125C —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
Tindminan RoHS Compliant —
Lead-Free Yes —
Fungsi — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
Bilang ng Outputs — 2 (HO, LO)
Maximum Offset Voltage (Voffset) — 600 V
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
Temperature na Operasyon — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)

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