IRS2153DSTRPBF vs IRS2153DSPBF 比較

詳細並排比較 IRS2153DSTRPBF 由 Infineon 與 IRS2153DSPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRS2153DSTRPBF IRS2153DSPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
拓撲 Half-Bridge Gate Driver with internal oscillator —
High-Side Floating Supply Absolute Max 600 V —
VDD Supply Voltage Range 10 V to 20 V —
Output Source Current (typ.) 0.18 A —
Output Sink Current (typ.) 0.26 A —
Internal Propagation Delay (typ.) 1.1 us —
Integrated Bootstrap FET Yes —
Oscillator Type RC-based, similar to CMOS 555 timer —
Programmable Shutdown Pin Yes —
封裝 8-pin SOIC 8-SOIC (SOIC-8)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40C to +125C —
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
RoHS 狀態 Compliant —
Lead-Free Yes —
功能 — Half-bridge gate driver with RC input oscillator
Configuration — High-side + low-side driver, half-bridge
輸出數量 — 2 (HO, LO)
Maximum Offset Voltage (Voffset) — 600 V
VCC Supply Voltage — 10 V to 20 V
VBS High-side Supply Voltage — VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) — 130 mA typical
Gate Drive Sink Current (IO-) — 270 mA typical
Rise Time (tr) — [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) — [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime — ~1.2 us
工作溫度 — -40 C to +125 C
Input Type — RC-input oscillator (no external PWM required)
Logic Polarity — Inverting / Non-inverting per channel
Undervoltage Lockout — Yes (VCC)

資料表與資源

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