K4A4G085WG-BCWE vs K4A4G085WD Perbandingan
Perbandingan bersamaan detil K4A4G085WG-BCWE dari Samsung Electronics dan K4A4G085WD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WG-BCWE | K4A4G085WD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $2,05 |
| Tipe Memori | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Ukuran Memori | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Laju Data | 3200 Mbps/pin | Up to 2400 Mbps (speed-grade dependent) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Paket | FBGA-78 (BCW) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh interval] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Organisasi | — | 512M x 8 |
| Speed Grade (example) | — | -BCPB (DDR4-2400), -BCRC |
| Tipe Antarmuka | — | DDR4 (double data rate, source-synchronous) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| ODT | — | On-Die Termination (built-in) |
| CAS Latency (typical) | — | [DATA_NEEDED: CL per speed grade] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |