K4A4G085WG-BCWE vs K4A4G085WD Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A4G085WG-BCWE disebabkan oleh Samsung Electronics dan K4A4G085WD disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A4G085WG-BCWE | K4A4G085WD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $2.05 |
| Jenis Ingatan | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Kadar Data | 3200 Mbps/pin | Up to 2400 Mbps (speed-grade dependent) |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Kemasan | FBGA-78 (BCW) | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | Parallel (DDR4) | — |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | [DATA_NEEDED: refresh interval] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Packaging | Tray | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Organisasi | — | 512M x 8 |
| Speed Grade (example) | — | -BCPB (DDR4-2400), -BCRC |
| Jenis Antaramuka | — | DDR4 (double data rate, source-synchronous) |
| Bank Group Architecture | — | Yes (DDR4 bank groups) |
| ODT | — | On-Die Termination (built-in) |
| CAS Latency (typical) | — | [DATA_NEEDED: CL per speed grade] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |