K4A4G165WD-BCRC vs K4A4G165WD-BCTD Perbandingan
Perbandingan bersamaan detil K4A4G165WD-BCRC dari Samsung Electronics dan K4A4G165WD-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G165WD-BCRC | K4A4G165WD-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Tegangan Pemuat | 1.2 V | — |
| Paket | FBGA-96 | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Process Generation | Samsung D-die | — |
| Tipe Antarmuka | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| Status RoHS | Lead free / RoHS Compliant | [DATA_NEEDED: RoHS status] |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Laju Data | — | 2666 Mbps/pin (-BCTD speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Antarmuka | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |