K4A4G165WD-BCRC vs K4A4G165WD-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G165WD-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-96 | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| Tindminan RoHS | Lead free / RoHS Compliant | [DATA_NEEDED: RoHS status] |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Rate ng Data | — | 2666 Mbps/pin (-BCTD speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Interface | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |