K4A8G085WC-BIWE vs K4A8G085WB Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BIWE dari Samsung Electronics dan K4A8G085WB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BIWE | K4A8G085WB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Rentang Suhu Kerja | -40°C to +95°C | — |
| Paket | 78-FBGA | 78-pin FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | [DATA_NEEDED: refresh rate 1x/2x] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Tegangan Pemuat | — | 1.2 V |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |