K4A8G085WC-BIWE vs K4A8G085WB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BIWE sa pamamagitan ng Samsung Electronics at K4A8G085WB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A8G085WC-BIWE | K4A8G085WB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 |
| Rate ng Data | 3200 Mbps | [DATA_NEEDED: speed grade data rate in Mbps] |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Hanay ng Temperature na Operasyon | -40°C to +95°C | — |
| Packhaging | 78-FBGA | 78-pin FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensya ng CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | [DATA_NEEDED: refresh rate 1x/2x] |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |