K4A8G085WC-BIWE vs K4A8G085WC-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BIWE dari Samsung Electronics dan K4A8G085WC-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BIWE | K4A8G085WC-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 Mbps | 2133 Mbps |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Rentang Suhu Kerja | -40°C to +95°C | — |
| Paket | 78-FBGA | 78FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | [DATA_NEEDED: CAS latency] |
| Refresh | Auto-refresh, self-refresh | [DATA_NEEDED: refresh rate 1x/2x] |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Tegangan Pemuat | — | 1.2 V |
| Suhu Kerja | — | 0 C to +85 C |
| Number of Terminals | — | 78 |
| Maximum Seated Height | — | 1.2 mm |
| Speed Grade | — | DDR4-2133 |
| Fitur | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Die Revision | — | [DATA_NEEDED: die revision] |
| Standard Package Quantity | — | [DATA_NEEDED: standard package quantity] |