K4A8G165WB-BCPB vs K4A8G165WB-BCWE Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCPB dari Samsung Electronics dan K4A8G165WB-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6,25 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Laju Data | 2133 Mbps | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | 96FBGA (TFBGA) | 96FBGA |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS compliance statement] |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh supported |
| Ukuran Memori | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Tegangan Pemuat | — | 1.2 V |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Termination | — | On-die termination (ODT) |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |