K4A8G165WB-BCPB vs K4A8G165WB-BCWE 比較
詳細並排比較 K4A8G165WB-BCPB 由 Samsung Electronics 與 K4A8G165WB-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G165WB-BCPB | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.25 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 組織 | 512M x 16 | — |
| 資料速率 | 2133 Mbps | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 工作溫度 | 0C to +85C | 0C to +85C |
| 封裝 | 96FBGA (TFBGA) | 96FBGA |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 介面 | DDR4 (synchronous, double data rate) | Parallel |
| Bank Groups | DDR4 bank-group architecture | — |
| RoHS 狀態 | Compliant (per Lisleapex listing) | [DATA_NEEDED: RoHS compliance statement] |
| Refresh | [DATA_NEEDED: refresh specification] | Self-refresh supported |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| 供應電壓 | — | 1.2 V |
| Access Time | — | 19 ns |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Termination | — | On-die termination (ODT) |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |