K4A8G165WB-BCPB vs K4A8G165WB-BCWE Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCPB disebabkan oleh Samsung Electronics dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung

K4A8G165WB-BCPB ✓ Aktif
Samsung Electronics
K4A8G165WB-BCWE K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung

K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung

K4A8G165WB-BCWE ✓ Aktif

Pengandingan Spesifikasi

Parametr K4A8G165WB-BCPB K4A8G165WB-BCWE
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $6.25
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 8 Gb —
Organisasi 512M x 16 —
Kadar Data 2133 Mbps 3200 Mbps/pin
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Suhu Operasi 0C to +85C 0C to +85C
Kemasan 96FBGA (TFBGA) 96FBGA
Number of Terminals 96 —
Package Shape Rectangular, bottom terminal position —
Die Generation 8Gb B-die —
Jenis Pemasangan Surface Mount Surface Mount
Antaramuka DDR4 (synchronous, double data rate) Parallel
Bank Groups DDR4 bank-group architecture —
Status RoHS Compliant (per Lisleapex listing) [DATA_NEEDED: RoHS compliance statement]
Refresh [DATA_NEEDED: refresh specification] Self-refresh supported
Saiz Ingatan — 8 Gb
Memory Organization — 512M x 16
Tegangan Pemberi Arus — 1.2 V
Access Time — 19 ns
Memory Format — DRAM (volatile)
Technology — DDR4 SDRAM B-die
Prefetch — 8n
Termination — On-die termination (ODT)
Aras MSL — [DATA_NEEDED: moisture sensitivity level]

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