K4A8G165WC-BCPB vs K4A8G165WC-BCWE Perbandingan
Perbandingan bersamaan detil K4A8G165WC-BCPB dari Samsung Electronics dan K4A8G165WC-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WC-BCPB | K4A8G165WC-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $38,00 |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antarmuka | DDR4 (16-bit data bus) | Differential (CK, /CK) |
| Paket | 96-ball FBGA (TFBGA) | 96-FBGA |
| Die Generation | C-die (1Y nm class) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | — |
| Fitur | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant | Compliant |
| Standard | JEDEC DDR4 SDRAM | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Rentang Suhu Kerja | — | 0°C to +95°C |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| JEDEC Standard | — | JEDEC DDR4 |