K4A8G165WC-BCPB vs K4A8G165WC-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G165WC-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G165WC-BCPB | K4A8G165WC-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $38.00 |
| Jenis Ingatan | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Kadar Data | DDR4-2133 (2133 Mbps/pin) | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Antaramuka | DDR4 (16-bit data bus) | Differential (CK, /CK) |
| Kemasan | 96-ball FBGA (TFBGA) | 96-FBGA |
| Die Generation | C-die (1Y nm class) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | — |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Termination | On-die termination (ODT), dynamic | — |
| Aras MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant | Compliant |
| Standard | JEDEC DDR4 SDRAM | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Gambaran Suhu Operasi | — | 0°C to +95°C |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| JEDEC Standard | — | JEDEC DDR4 |