K4B4G1646 vs K4B4G1646E-BCNB Perbandingan
Perbandingan bersamaan detil K4B4G1646 dari Samsung Electronics dan K4B4G1646E-BCNB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646 | K4B4G1646E-BCNB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $13,52 |
| Tipe Memori | DDR3 SDRAM | DDR3 SDRAM |
| Ukuran Memori | 4 Gbit | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Antarmuka | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Tegangan Pemuat | 1.5 V (DDR3L variants 1.35 V) | 1.35 V (1.283 V to 1.45 V) |
| Paket | 96-FBGA | 96-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | 0C to +95C |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Laju Data | — | 1866 Mbps |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Jumlah Pin | — | 96 |
| Tipe Antarmuka | — | Parallel |
| Refresh | — | 8K / 64 ms |
| Burst Length | — | 8, 4 (fixed) |
| Write Recovery Time | — | [DATA_NEEDED: tWR] |
| Row Cycle Time | — | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | — | [DATA_NEEDED: tRCD] |
| Row Precharge Time | — | [DATA_NEEDED: tRP] |
| Active to Precharge Time | — | [DATA_NEEDED: tRAS] |