K4B4G1646 vs K4B4G1646E-BCNB 比較
詳細並排比較 K4B4G1646 由 Samsung Electronics 與 K4B4G1646E-BCNB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ 啟用中規格比較
| 參數 | K4B4G1646 | K4B4G1646E-BCNB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $13.52 |
| 記憶體類型 | DDR3 SDRAM | DDR3 SDRAM |
| 記憶體容量 | 4 Gbit | 4 Gb |
| 組織 | 256M x 16 | 256M x 16 |
| 介面 | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| 供應電壓 | 1.5 V (DDR3L variants 1.35 V) | 1.35 V (1.283 V to 1.45 V) |
| 封裝 | 96-FBGA | 96-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | 0C to +95C |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等級 | [DATA_NEEDED: moisture sensitivity level] | — |
| 資料速率 | — | 1866 Mbps |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| 腳位數 | — | 96 |
| 介面類型 | — | Parallel |
| Refresh | — | 8K / 64 ms |
| Burst Length | — | 8, 4 (fixed) |
| Write Recovery Time | — | [DATA_NEEDED: tWR] |
| Row Cycle Time | — | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | — | [DATA_NEEDED: tRCD] |
| Row Precharge Time | — | [DATA_NEEDED: tRP] |
| Active to Precharge Time | — | [DATA_NEEDED: tRAS] |