K4B4G1646 vs K4B4G1646E-BCNB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646 sa pamamagitan ng Samsung Electronics at K4B4G1646E-BCNB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646 | K4B4G1646E-BCNB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $13.52 |
| Uri ng Memory | DDR3 SDRAM | DDR3 SDRAM |
| Laki ng Memory | 4 Gbit | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Interface | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Volte ng Pagbibigay | 1.5 V (DDR3L variants 1.35 V) | 1.35 V (1.283 V to 1.45 V) |
| Packhaging | 96-FBGA | 96-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | 0C to +95C |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Rate ng Data | — | 1866 Mbps |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Bilang ng Pins | — | 96 |
| Uri ng Interface | — | Parallel |
| Refresh | — | 8K / 64 ms |
| Burst Length | — | 8, 4 (fixed) |
| Write Recovery Time | — | [DATA_NEEDED: tWR] |
| Row Cycle Time | — | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | — | [DATA_NEEDED: tRCD] |
| Row Precharge Time | — | [DATA_NEEDED: tRP] |
| Active to Precharge Time | — | [DATA_NEEDED: tRAS] |