K4B4G1646D-BCMA0 vs K4B4G1646D-BFMA Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCMA0 dari Samsung Electronics dan K4B4G1646D-BFMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCMA0 - 4Gb DDR3 SDRAM 256Mx16 | Samsung
K4B4G1646D-BCMA0 ✗ Akhir HidupPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCMA0 | K4B4G1646D-BFMA |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Tipe Memori | DDR3 SDRAM | DDR3 SDRAM |
| Ukuran Memori | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Laju Data | 1866 Mbps | 1866 Mbps |
| Tegangan Pemuat | 1.5 V | 1.5V |
| Suhu Kerja | 0°C to 85°C | — |
| Paket | 96-FBGA | 96-ball FBGA |
| Tipe Mounting | Surface Mount | — |
| Memory Interface | Parallel | — |
| RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Lead Free | Yes | — |
| Status Lingkungan Hidup | EOL | — |
| Technology | DDR3 | — |
| Number of Terminals | 96 | — |
| Density | — | 4Gb |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| Latensi CAS | — | Programmable |
| On-Die Termination | — | Yes |
| Temperature Range | — | 0°C to 95°C (case) |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes |