K4B4G1646E-BYMA vs IS43TR16256AL-125KBL Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BYMA dari Samsung Electronics dan IS43TR16256AL-125KBL dari ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BYMA | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14,32 | — |
| Tipe Memori | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Tegangan Pemuat | 1.35 V (1.28 V to 1.575 V) | 1.35V (backward compatible to 1.5V) |
| Clock Frequency | 933 MHz | 800 MHz |
| Laju Data | 1866 Mbps/pin | 1600 Mbps |
| Suhu Kerja | 0°C to +95°C | 0°C ~ 95°C |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Paket | FBGA-96 | 96-TWBGA (9x13mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | [DATA_NEEDED: Burst Length] | — |
| Jumlah Pin | 96 | — |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Antarmuka | — | Parallel |
| Access Time | — | 20 ns |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |