K4B4G1646E-BYMA vs IS43TR16256AL-125KBL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMA disebabkan oleh Samsung Electronics dan IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMA | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $14.32 | — |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.35 V (1.28 V to 1.575 V) | 1.35V (backward compatible to 1.5V) |
| Clock Frequency | 933 MHz | 800 MHz |
| Kadar Data | 1866 Mbps/pin | 1600 Mbps |
| Suhu Operasi | 0°C to +95°C | 0°C ~ 95°C |
| Operating Current | 14 mA | — |
| Standby Current | 2 mA, 3 mA | — |
| Kemasan | FBGA-96 | 96-TWBGA (9x13mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | [DATA_NEEDED: Burst Length] | — |
| Bilangan Pin | 96 | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Antaramuka | — | Parallel |
| Access Time | — | 20 ns |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |