K9F4G08U0B-PCB0 vs MX30LF4GE8AB Perbandingan

Perbandingan bersamaan detil K9F4G08U0B-PCB0 dari Samsung Electronics dan MX30LF4GE8AB dari Macronix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K9F4G08U0B-PCB0 MX30LF4GE8AB
Merek Samsung Electronics Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NAND Flash (SLC, asynchronous) NAND Flash (SLC)
Density 4 Gbit (512 MB) 4 Gbit (512 M x 8)
Organisasi (512M + 16M) x 8 bit —
Page Size (2 K + 64) byte 2112 bytes (2048 + 64 spare)
Block Size (128 K + 4 K) byte 64 pages (128 KB + 4 KB spare)
Data Register (2K + 64) x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Antarmuka 8-bit multiplexed NAND I/O Parallel (asynchronous)
Paket TSOP1-48 (12 mm x 20 mm, lead-free) 48-pin TSOP Type-I (48-TSOP)
Tipe Mounting Surface Mount Surface Mount
Operating Temperature (commercial) 0C to +70C —
Program/Erase Automatic, on-chip page buffer —
ECC Requirement External (1-bit/512B minimum, 4-bit recommended) —
Status RoHS Lead-free (Pb-free), RoHS compliant Compliant
Package Suffix Code -PCB0 (TSOP1, 3.3 V, commercial, lead-free) —
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time — 20 ns
Bus Width — 8-bit (multiplexed I/O)
Standard Compliance — ONFI 1.0
Program/Erase Cycles — [DATA_NEEDED: P/E endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
Suhu Kerja — -40C to +85C (industrial)
Level MSL — [DATA_NEEDED: MSL rating]
Status Polling — R/B# open-drain output

Spek dan Sumber

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