K9F4G08U0B-PCB0 vs MX30LF4GE8AB Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9F4G08U0B-PCB0 sa pamamagitan ng Samsung Electronics at MX30LF4GE8AB sa pamamagitan ng Macronix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9F4G08U0B-PCB0 MX30LF4GE8AB
Brand Samsung Electronics Macronix
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NAND Flash (SLC, asynchronous) NAND Flash (SLC)
Density 4 Gbit (512 MB) 4 Gbit (512 M x 8)
Organisasyon (512M + 16M) x 8 bit —
Page Size (2 K + 64) byte 2112 bytes (2048 + 64 spare)
Block Size (128 K + 4 K) byte 64 pages (128 KB + 4 KB spare)
Data Register (2K + 64) x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Interface 8-bit multiplexed NAND I/O Parallel (asynchronous)
Packhaging TSOP1-48 (12 mm x 20 mm, lead-free) 48-pin TSOP Type-I (48-TSOP)
Uri ng Pagpapasok Surface Mount Surface Mount
Operating Temperature (commercial) 0C to +70C —
Program/Erase Automatic, on-chip page buffer —
ECC Requirement External (1-bit/512B minimum, 4-bit recommended) —
Tindminan RoHS Lead-free (Pb-free), RoHS compliant Compliant
Package Suffix Code -PCB0 (TSOP1, 3.3 V, commercial, lead-free) —
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time — 20 ns
Bus Width — 8-bit (multiplexed I/O)
Standard Compliance — ONFI 1.0
Program/Erase Cycles — [DATA_NEEDED: P/E endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
Temperature na Operasyon — -40C to +85C (industrial)
Level ng MSL — [DATA_NEEDED: MSL rating]
Status Polling — R/B# open-drain output

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