K9F4G08U0B-PCB0 vs MX30LF4GE8AB Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K9F4G08U0B-PCB0 disebabkan oleh Samsung Electronics dan MX30LF4GE8AB disebabkan oleh Macronix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ Aktif

Pengandingan Spesifikasi

Parametr K9F4G08U0B-PCB0 MX30LF4GE8AB
Merek Samsung Electronics Macronix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan NAND Flash (SLC, asynchronous) NAND Flash (SLC)
Density 4 Gbit (512 MB) 4 Gbit (512 M x 8)
Organisasi (512M + 16M) x 8 bit —
Page Size (2 K + 64) byte 2112 bytes (2048 + 64 spare)
Block Size (128 K + 4 K) byte 64 pages (128 KB + 4 KB spare)
Data Register (2K + 64) x 8 bit —
Supply Voltage (VCC) 2.7 V to 3.6 V —
Antaramuka 8-bit multiplexed NAND I/O Parallel (asynchronous)
Kemasan TSOP1-48 (12 mm x 20 mm, lead-free) 48-pin TSOP Type-I (48-TSOP)
Jenis Pemasangan Surface Mount Surface Mount
Operating Temperature (commercial) 0C to +70C —
Program/Erase Automatic, on-chip page buffer —
ECC Requirement External (1-bit/512B minimum, 4-bit recommended) —
Status RoHS Lead-free (Pb-free), RoHS compliant Compliant
Package Suffix Code -PCB0 (TSOP1, 3.3 V, commercial, lead-free) —
Operating Voltage (VCC) — 2.7 V to 3.6 V
Access Time — 20 ns
Bus Width — 8-bit (multiplexed I/O)
Standard Compliance — ONFI 1.0
Program/Erase Cycles — [DATA_NEEDED: P/E endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
Suhu Operasi — -40C to +85C (industrial)
Aras MSL — [DATA_NEEDED: MSL rating]
Status Polling — R/B# open-drain output

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