K9F4G08U0B-PCB0 vs MX30LF4GE8AB 比較
詳細並排比較 K9F4G08U0B-PCB0 由 Samsung Electronics 與 MX30LF4GE8AB 由 Macronix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung
K9F4G08U0B-PCB0 ✓ 啟用中
規格比較
| 參數 | K9F4G08U0B-PCB0 | MX30LF4GE8AB |
|---|---|---|
| 品牌 | Samsung Electronics | Macronix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | NAND Flash (SLC, asynchronous) | NAND Flash (SLC) |
| Density | 4 Gbit (512 MB) | 4 Gbit (512 M x 8) |
| 組織 | (512M + 16M) x 8 bit | — |
| Page Size | (2 K + 64) byte | 2112 bytes (2048 + 64 spare) |
| Block Size | (128 K + 4 K) byte | 64 pages (128 KB + 4 KB spare) |
| Data Register | (2K + 64) x 8 bit | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | — |
| 介面 | 8-bit multiplexed NAND I/O | Parallel (asynchronous) |
| 封裝 | TSOP1-48 (12 mm x 20 mm, lead-free) | 48-pin TSOP Type-I (48-TSOP) |
| 安裝類型 | Surface Mount | Surface Mount |
| Operating Temperature (commercial) | 0C to +70C | — |
| Program/Erase | Automatic, on-chip page buffer | — |
| ECC Requirement | External (1-bit/512B minimum, 4-bit recommended) | — |
| RoHS 狀態 | Lead-free (Pb-free), RoHS compliant | Compliant |
| Package Suffix Code | -PCB0 (TSOP1, 3.3 V, commercial, lead-free) | — |
| Operating Voltage (VCC) | — | 2.7 V to 3.6 V |
| Access Time | — | 20 ns |
| Bus Width | — | 8-bit (multiplexed I/O) |
| Standard Compliance | — | ONFI 1.0 |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance cycles] |
| Data Retention | — | [DATA_NEEDED: retention years] |
| 工作溫度 | — | -40C to +85C (industrial) |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| Status Polling | — | R/B# open-drain output |