K9QDGB8U7M vs K9MDG08U5M Perbandingan

Perbandingan bersamaan detil K9QDGB8U7M dari Samsung Electronics dan K9MDG08U5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K9QDGB8U7M K9MDG08U5M
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Unknown Aktif
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
Tipe Memori NAND Flash MLC Large Block NAND Flash
Density [DATA_NEEDED: Density] 16 Gbit (2 GB)
Organisasi [DATA_NEEDED: Organization] 16G x 8 bit
Tipe Antarmuka [DATA_NEEDED: Interface Type] —
Tegangan Pemuat [DATA_NEEDED: Supply Voltage] —
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
Suhu Kerja [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Tipe Mounting Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS Status] unknown
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
Antarmuka — Asynchronous x8 multiplexed address/data
Paket — 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]
Program Time (tPROG) — [DATA_NEEDED: tPROG]

Spek dan Sumber

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