K9QDGB8U7M vs K9MDG08U5M 比較

詳細並排比較 K9QDGB8U7M 由 Samsung Electronics 與 K9MDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ 啟用中

規格比較

參數 K9QDGB8U7M K9MDG08U5M
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 Unknown 啟用中
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
記憶體類型 NAND Flash MLC Large Block NAND Flash
Density [DATA_NEEDED: Density] 16 Gbit (2 GB)
組織 [DATA_NEEDED: Organization] 16G x 8 bit
介面類型 [DATA_NEEDED: Interface Type] —
供應電壓 [DATA_NEEDED: Supply Voltage] —
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
工作溫度 [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
安裝類型 Surface Mount Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS Status] unknown
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
介面 — Asynchronous x8 multiplexed address/data
封裝 — 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]
Program Time (tPROG) — [DATA_NEEDED: tPROG]

資料表與資源

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