K9QDGB8U7M vs K9MDG08U5M Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K9QDGB8U7M disebabkan oleh Samsung Electronics dan K9MDG08U5M disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K9QDGB8U7M K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9QDGB8U7M Unknown
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Aktif

Pengandingan Spesifikasi

Parametr K9QDGB8U7M K9MDG08U5M
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Unknown Aktif
Manufacturer Samsung Electronics —
Product Family K9 NAND Flash —
Jenis Ingatan NAND Flash MLC Large Block NAND Flash
Density [DATA_NEEDED: Density] 16 Gbit (2 GB)
Organisasi [DATA_NEEDED: Organization] 16G x 8 bit
Jenis Antaramuka [DATA_NEEDED: Interface Type] —
Tegangan Pemberi Arus [DATA_NEEDED: Supply Voltage] —
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Program/Erase Endurance [DATA_NEEDED: Program/Erase Endurance] —
Read Latency [DATA_NEEDED: Read Latency] —
Package Type BGA (surface mount) —
Suhu Operasi [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS Status] unknown
Cell Type — MLC (2 bits per cell)
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
Antaramuka — Asynchronous x8 multiplexed address/data
Kemasan — 48-pin TSOP1 dual stacked, 12 mm x 20 mm
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]
Program Time (tPROG) — [DATA_NEEDED: tPROG]

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