M29F800FB55N3E2 vs M29F800FT55N3E2 Perbandingan
Perbandingan bersamaan detil M29F800FB55N3E2 dari Micron Technology dan M29F800FT55N3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F800FB55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Ukuran Memori | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Tipe Memori | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Antarmuka | Parallel | Parallel |
| Organisasi | Bottom boot (B suffix) | — |
| Lebar Bus Data | 8-bit or 16-bit (BYTE# selectable) | — |
| Paket | 48-pin TSOP Type I (N suffix) | 48-TSOP I |
| Tipe Mounting | Surface Mount (SMD/SMT) | Surface Mount |
| Suhu Kerja | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Status RoHS | Compliant (E suffix) | Compliant (E suffix = lead-free/RoHS) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| Tegangan Pemuat | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |