M29F800FB55N3E2 vs M29F800FT55N3E2 比較
詳細並排比較 M29F800FB55N3E2 由 Micron Technology 與 M29F800FT55N3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FB55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體容量 | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| 記憶體類型 | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| 介面 | Parallel | Parallel |
| 組織 | Bottom boot (B suffix) | — |
| 資料匯流排寬度 | 8-bit or 16-bit (BYTE# selectable) | — |
| 封裝 | 48-pin TSOP Type I (N suffix) | 48-TSOP I |
| 安裝類型 | Surface Mount (SMD/SMT) | Surface Mount |
| 工作溫度 | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| RoHS 狀態 | Compliant (E suffix) | Compliant (E suffix = lead-free/RoHS) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| 供應電壓 | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |