M29F800FB55N3E2 vs M29F800FT55N3E2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F800FB55N3E2 sa pamamagitan ng Micron Technology at M29F800FT55N3E2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F800FB55N3E2 - 8Mb 5V 55ns NOR Flash TSOP-48 | Micron
M29F800FB55N3E2 ✓ NakahandaMicron Technology
M29F800FT55N3E2 - 8Mb 5V Parallel NOR Flash 55ns | Micron
M29F800FT55N3E2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F800FB55N3E2 | M29F800FT55N3E2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | EEPROM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Laki ng Memory | 8 Mbit (1 M x 8 / 512 K x 16) | — |
| Uri ng Memory | NOR Flash, SLC, Parallel | NOR Flash |
| Access Time | 55 ns | 55 ns |
| Supply Voltage Min | 4.5 V | — |
| Supply Voltage Max | 5.5 V | — |
| Interface | Parallel | Parallel |
| Organisasyon | Bottom boot (B suffix) | — |
| Width ng Data Bus | 8-bit or 16-bit (BYTE# selectable) | — |
| Packhaging | 48-pin TSOP Type I (N suffix) | 48-TSOP I |
| Uri ng Pagpapasok | Surface Mount (SMD/SMT) | Surface Mount |
| Temperature na Operasyon | Up to +125 C (Auto Grade 3 suffix) | -40C to +125C |
| Packing | Tray (blank suffix) | — |
| Tindminan RoHS | Compliant (E suffix) | Compliant (E suffix = lead-free/RoHS) |
| Programming Operations | READ, ERASE, PROGRAM via command set | — |
| Write Protection | Block protection with lockable boot block | — |
| Status Output | RB# (Ready/Busy) | — |
| Memory Organization | — | 512K x 16 (8 Mbit) |
| Density | — | 8389 kbits |
| Volte ng Pagbibigay | — | 5 V |
| Boot Block Architecture | — | Top Boot Block |
| Word/Byte Configuration | — | BYTE# pin selectable (16-bit / 8-bit) |
| Hardware Reset / Power-Down | — | RP# pin |
| Embedded Program/Erase Controller | — | Yes (byte/word program, block erase) |
| Program/Erase Endurance | — | 100,000 cycles per block (typical for family) |
| Data Retention | — | >20 years (typical for family) |
| Ready/Busy Output | — | Yes |