M29F800FT55M3F2 vs M29F800FT55M3E2 Perbandingan
Perbandingan bersamaan detil M29F800FT55M3F2 dari Micron Technology dan M29F800FT55M3E2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktifMicron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55M3F2 | M29F800FT55M3E2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Parallel NOR Flash | NOR Flash |
| Density | 8 Mbit (8389 kbits) | 8389 kbits |
| Organisasi | 512K x 16 / 1M x 8 | 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 44-pin SO (SOP) | 44-SO (SOP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Antarmuka | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Status RoHS | Compliant (lead-free suffix F2) | Compliant (E suffix) |
| Ukuran Memori | — | 8 Mbit |
| Tegangan Pemuat | — | 5 V |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |