M29F800FT55M3F2 vs M29F800FT55M3E2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng M29F800FT55M3F2 sa pamamagitan ng Micron Technology at M29F800FT55M3E2 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ NakahandaMicron Technology
M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron
M29F800FT55M3E2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | M29F800FT55M3F2 | M29F800FT55M3E2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Kategorya | Memory ICs | EEPROM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | Parallel NOR Flash | NOR Flash |
| Density | 8 Mbit (8389 kbits) | 8389 kbits |
| Organisasyon | 512K x 16 / 1M x 8 | 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Temperature na Operasyon | -40C to +125C | -40C to +125C |
| Packhaging | 44-pin SO (SOP) | 44-SO (SOP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Interface | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Tindminan RoHS | Compliant (lead-free suffix F2) | Compliant (E suffix) |
| Laki ng Memory | — | 8 Mbit |
| Volte ng Pagbibigay | — | 5 V |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |