M29F800FT55M3F2 vs M29F800FT55M3E2 比較
詳細並排比較 M29F800FT55M3F2 由 Micron Technology 與 M29F800FT55M3E2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | M29F800FT55M3F2 | M29F800FT55M3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | EEPROM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Parallel NOR Flash | NOR Flash |
| Density | 8 Mbit (8389 kbits) | 8389 kbits |
| 組織 | 512K x 16 / 1M x 8 | 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| 工作溫度 | -40C to +125C | -40C to +125C |
| 封裝 | 44-pin SO (SOP) | 44-SO (SOP) |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| 介面 | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS 狀態 | Compliant (lead-free suffix F2) | Compliant (E suffix) |
| 記憶體容量 | — | 8 Mbit |
| 供應電壓 | — | 5 V |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |