M29W064FB70N3E vs M29W064FT70N3F Perbandingan

Perbandingan bersamaan detil M29W064FB70N3E dari Micron Technology dan M29W064FT70N3F dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29W064FB70N3E M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E - 64Mbit 3V NOR Flash 70ns TSOP-48 | Micron

M29W064FB70N3E ✓ Aktif
Micron Technology
M29W064FT70N3F M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F - 64Mb 3V NOR Flash 70ns | Micron

M29W064FT70N3F ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29W064FB70N3E M29W064FT70N3F
Merek Micron Technology Micron Technology
Kategori Flash Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori NOR Flash, Parallel NOR Flash
Ukuran Memori 64 Mbit (8M x 8 / 4M x 16) —
Tegangan Pemuat 3.0 V to 3.6 V (3V/3.3V) —
Access Time 70 ns 70 ns
Antarmuka Parallel, CFI compliant Parallel
Boot Block Bottom boot block (FB variant) —
Paket 48-Pin TSOP 48-TSOP I
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40C to +125C -40C to +125C
Organization Switching Byte/Word selectable via BYTE# pin —
Reset/Power-Down RP# pin —
Data Protection Block protection, WP# hardware protection —
Device Signature Electronic signature for device identification —
Packaging Tray —
Status RoHS Compliant unknown
Brand Source Micron Technology / Alliance Memory, Inc. (second source) —
Erase/Program Mode Word/byte program, block erase, chip erase —
Density — 64 Mbit
Organisasi — 8 Mbit x8 / 4 Mbit x16
Supply Voltage (VCC) — up to 3.6 V for program, erase, read
VPP Fast Program Voltage — 12 V (optional)
Boot Block Configuration — Top boot block (FT)
Programming Method — Command set / data polling / toggle bit
Block Protection — Yes, with temporary unprotection
Product Longevity Program — No
Width — x8/x16

Spek dan Sumber

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