M29W064FB70N3E vs M29W064FT70N3F Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W064FB70N3E disebabkan oleh Micron Technology dan M29W064FT70N3F disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W064FB70N3E | M29W064FT70N3F |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash, Parallel | NOR Flash |
| Saiz Ingatan | 64 Mbit (8M x 8 / 4M x 16) | — |
| Tegangan Pemberi Arus | 3.0 V to 3.6 V (3V/3.3V) | — |
| Access Time | 70 ns | 70 ns |
| Antaramuka | Parallel, CFI compliant | Parallel |
| Boot Block | Bottom boot block (FB variant) | — |
| Kemasan | 48-Pin TSOP | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Organization Switching | Byte/Word selectable via BYTE# pin | — |
| Reset/Power-Down | RP# pin | — |
| Data Protection | Block protection, WP# hardware protection | — |
| Device Signature | Electronic signature for device identification | — |
| Packaging | Tray | — |
| Status RoHS | Compliant | unknown |
| Brand Source | Micron Technology / Alliance Memory, Inc. (second source) | — |
| Erase/Program Mode | Word/byte program, block erase, chip erase | — |
| Density | — | 64 Mbit |
| Organisasi | — | 8 Mbit x8 / 4 Mbit x16 |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Boot Block Configuration | — | Top boot block (FT) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Product Longevity Program | — | No |
| Width | — | x8/x16 |