M29W128GH70N3E vs M29W064FT70N3E Perbandingan
Perbandingan bersamaan detil M29W128GH70N3E dari Micron Technology dan M29W064FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W128GH70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Ukuran Memori | 128 Mbit (16 MB) | — |
| Organisasi | 8M x 16 / 16M x 8 | 8 Mb x8 or 4 Mb x16 |
| Antarmuka | Parallel (asynchronous) | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Suhu Kerja | -40C to +125C | -40C to +85C |
| Temperature Grade | Automotive | — |
| Paket | 56-TSOP | 48-TSOP |
| Number of Terminals | 56 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Density | — | 64 Mbit |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |