M29W128GH70N3E vs M29W064FT70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W128GH70N3E disebabkan oleh Micron Technology dan M29W064FT70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W128GH70N3E | M29W064FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash (Parallel) |
| Saiz Ingatan | 128 Mbit (16 MB) | — |
| Organisasi | 8M x 16 / 16M x 8 | 8 Mb x8 or 4 Mb x16 |
| Antaramuka | Parallel (asynchronous) | Parallel, CFI compliant |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| Suhu Operasi | -40C to +125C | -40C to +85C |
| Temperature Grade | Automotive | — |
| Kemasan | 56-TSOP | 48-TSOP |
| Number of Terminals | 56 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | — |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | [DATA_NEEDED: program/erase endurance cycles] |
| Density | — | 64 Mbit |
| Boot Block Architecture | — | Top boot block (FT) |
| Programming Voltage | — | Single 3 V supply (no separate VPP required) |
| Erase/Program Method | — | Command-set page programming, block erase |
| Product Longevity Program | — | No |
| Active Read Current | — | [DATA_NEEDED: active read supply current] |
| Standby Current | — | [DATA_NEEDED: standby current] |