M29W640GB70N3E vs M29W320DB70N3E Perbandingan
Perbandingan bersamaan detil M29W640GB70N3E dari Micron Technology dan M29W320DB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W640GB70N3E | M29W320DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| Antarmuka | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V | — |
| Organisasi | 4M x16 / 8M x8 | 2M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |