M29W640GB70N3E vs M29W320DB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W640GB70N3E disebabkan oleh Micron Technology dan M29W320DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W640GB70N3E | M29W320DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash | NOR Flash |
| Density | 64 Mbit (8 MByte) | 32 Mbit (33554 kbits) |
| Antaramuka | Parallel, asynchronous | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 2.7 V to 3.6 V | — |
| Organisasi | 4M x16 / 8M x8 | 2M x 16 |
| Boot Block | Bottom boot block (GB) | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Programming | Word/Byte program, block erase | — |
| Command Set | M29W family standard command set | — |
| Chipset Validation | N/A | — |
| FBGA Code | N/A | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |