MJ3055 vs MJ2955 Perbandingan

Perbandingan bersamaan detil MJ3055 dari Seme LAB dan MJ2955 dari onsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum MJ3055 MJ2955
Merek Seme LAB onsemi
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Polarity NPN PNP (complement of 2N3055)
Collector-Emitter Breakdown Voltage (VCEO) 60 V —
Maximum Collector Current (IC) 10 A —
Paket TO-3 (hermetically sealed metal can) TO-3 (TO-204-3) metal case
Technology Bipolar (BJT), silicon NPN —
Power Dissipation [DATA_NEEDED: power dissipation PD] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] 20 to 70 (at IC = 4 A, VCE = 4 V)
Frekuensi Transisi (ft) [DATA_NEEDED: fT] 4 MHz
Collector-Emitter Saturation Voltage [DATA_NEEDED: VCE(sat)] —
Tipe Mounting Through Hole Chassis / Through-hole bolt-down
Hermetic Sealing Yes (metal can) —
Screening Options BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) —
Suhu Kerja [DATA_NEEDED: operating temperature range] —
Complementary PNP Type MJ2955 —
Typical Applications General-purpose amplifier and switching —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Tipe Transistor — PNP
Tegangan Pemisah-Penjana (Vceo) — 60 V
Tegangan Dasar Pemisah (Vcbo) — 60 V
Tegangan Dasar Penjana (Vebo) — 7 V
Continuous Collector Current (IC) — 15 A
Continuous Base Current (IB) — 7 A
Power Dissipation (PD) — 115 W at 25 °C case
Junction-to-Case Thermal Resistance (θJC) — 1.52 °C/W
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) — 1.1 V typical (at IC = 15 A)
Suhu Hubung Kerja — -65 °C to +200 °C

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