MJ3055 vs MJ2955 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MJ3055 sa pamamagitan ng Seme LAB at MJ2955 sa pamamagitan ng onsemi. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MJ3055 | MJ2955 |
|---|---|---|
| Brand | Seme LAB | onsemi |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | NPN | PNP (complement of 2N3055) |
| Collector-Emitter Breakdown Voltage (VCEO) | 60 V | — |
| Maximum Collector Current (IC) | 10 A | — |
| Packhaging | TO-3 (hermetically sealed metal can) | TO-3 (TO-204-3) metal case |
| Technology | Bipolar (BJT), silicon NPN | — |
| Power Dissipation | [DATA_NEEDED: power dissipation PD] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE range] | 20 to 70 (at IC = 4 A, VCE = 4 V) |
| Dalas ng Transisyon (ft) | [DATA_NEEDED: fT] | 4 MHz |
| Collector-Emitter Saturation Voltage | [DATA_NEEDED: VCE(sat)] | — |
| Uri ng Pagpapasok | Through Hole | Chassis / Through-hole bolt-down |
| Hermetic Sealing | Yes (metal can) | — |
| Screening Options | BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Complementary PNP Type | MJ2955 | — |
| Typical Applications | General-purpose amplifier and switching | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Uri ng Transistor | — | PNP |
| Voltage ng Collector-Emitter (Vceo) | — | 60 V |
| Voltage ng Collector-Base (Vcbo) | — | 60 V |
| Voltage ng Emitter-Base (Vebo) | — | 7 V |
| Continuous Collector Current (IC) | — | 15 A |
| Continuous Base Current (IB) | — | 7 A |
| Power Dissipation (PD) | — | 115 W at 25 °C case |
| Junction-to-Case Thermal Resistance (θJC) | — | 1.52 °C/W |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.1 V typical (at IC = 15 A) |
| Temperature ng Junction na Operasyon | — | -65 °C to +200 °C |