MJ3055 vs MJ2955 比較
詳細並排比較 MJ3055 由 Seme LAB 與 MJ2955 由 onsemi. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MJ3055 | MJ2955 |
|---|---|---|
| 品牌 | Seme LAB | onsemi |
| 類別 | Transistors | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | NPN | PNP (complement of 2N3055) |
| Collector-Emitter Breakdown Voltage (VCEO) | 60 V | — |
| Maximum Collector Current (IC) | 10 A | — |
| 封裝 | TO-3 (hermetically sealed metal can) | TO-3 (TO-204-3) metal case |
| Technology | Bipolar (BJT), silicon NPN | — |
| Power Dissipation | [DATA_NEEDED: power dissipation PD] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE range] | 20 to 70 (at IC = 4 A, VCE = 4 V) |
| 轉換頻率 (ft) | [DATA_NEEDED: fT] | 4 MHz |
| Collector-Emitter Saturation Voltage | [DATA_NEEDED: VCE(sat)] | — |
| 安裝類型 | Through Hole | Chassis / Through-hole bolt-down |
| Hermetic Sealing | Yes (metal can) | — |
| Screening Options | BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Complementary PNP Type | MJ2955 | — |
| Typical Applications | General-purpose amplifier and switching | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | Compliant |
| 電晶體類型 | — | PNP |
| 集極-射極電壓 (Vceo) | — | 60 V |
| 集極-基極電壓 (Vcbo) | — | 60 V |
| 射極-基極電壓 (Vebo) | — | 7 V |
| Continuous Collector Current (IC) | — | 15 A |
| Continuous Base Current (IB) | — | 7 A |
| Power Dissipation (PD) | — | 115 W at 25 °C case |
| Junction-to-Case Thermal Resistance (θJC) | — | 1.52 °C/W |
| 集極-射極飽和電壓 (Vce(sat)) | — | 1.1 V typical (at IC = 15 A) |
| 工作接面溫度 | — | -65 °C to +200 °C |