MJ3055 vs MJ2955 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MJ3055 disebabkan oleh Seme LAB dan MJ2955 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr MJ3055 MJ2955
Merek Seme LAB onsemi
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Polarity NPN PNP (complement of 2N3055)
Collector-Emitter Breakdown Voltage (VCEO) 60 V —
Maximum Collector Current (IC) 10 A —
Kemasan TO-3 (hermetically sealed metal can) TO-3 (TO-204-3) metal case
Technology Bipolar (BJT), silicon NPN —
Power Dissipation [DATA_NEEDED: power dissipation PD] —
DC Current Gain (hFE) [DATA_NEEDED: hFE range] 20 to 70 (at IC = 4 A, VCE = 4 V)
Frekuensi Pertukaran (ft) [DATA_NEEDED: fT] 4 MHz
Collector-Emitter Saturation Voltage [DATA_NEEDED: VCE(sat)] —
Jenis Pemasangan Through Hole Chassis / Through-hole bolt-down
Hermetic Sealing Yes (metal can) —
Screening Options BS, CECC, JAN, JANTX, JANTXV, JANS (per Seme LAB) —
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Complementary PNP Type MJ2955 —
Typical Applications General-purpose amplifier and switching —
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Jenis Transistor — PNP
Tegangan Pengumpul-Pemancar (Vceo) — 60 V
Tegangan Pengumpul-Bas (Vcbo) — 60 V
Tegangan Pemancar-Bas (Vebo) — 7 V
Continuous Collector Current (IC) — 15 A
Continuous Base Current (IB) — 7 A
Power Dissipation (PD) — 115 W at 25 °C case
Junction-to-Case Thermal Resistance (θJC) — 1.52 °C/W
Tegangan Pengumpul-Pemancar (Vce(sat)) — 1.1 V typical (at IC = 15 A)
Suhu Hubungan Operasi — -65 °C to +200 °C

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