MMA20312BT1 vs MMA25312BT1 Perbandingan
Perbandingan bersamaan detil MMA20312BT1 dari NXP Semiconductors dan MMA25312BT1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MMA20312BT1 - 2-Stage InGaP HBT Linear Amplifier, 1.8-2.2 GHz | NXP
MMA20312BT1 ✓ AktifNXP Semiconductors
MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP
MMA25312BT1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MMA20312BT1 | MMA25312BT1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Product Type | RF Linear Power Amplifier | — |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | InGaP HBT (Heterojunction Bipolar Transistor) |
| Topologi | 2-stage Class AB cascade | 2-stage linear driver amplifier |
| Frequency Range | 1800 MHz to 2200 MHz | 2300 MHz to 2700 MHz |
| Small-Signal Gain | 27.2 dB | 26 dB |
| Saturated Output Power (Psat) | 30.5 dBm (~1.1 W) | — |
| Tegangan Pemuat | 5 V | 3 V to 5 V |
| Supply Current (Idq) | 70 mA typical | — |
| Paket / Case | 12-QFN (3x3 mm) with Exposed Pad | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| RF Input/Output Match | Internal 50 ohm | — |
| Supported RF Standards | LTE, PCS, TD-SCDMA, UMTS | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40 °C to +85 °C |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant (per NXP product page) | Compliant |
| Lead-Free | Yes | — |
| Packaging | Tape & Reel | — |
| Saturated Output Power | — | 31 dBm (typ) |
| Noise Figure | — | 3.8 dB at 2.5 GHz |
| Arus Pemuat | — | 124 mA (typ) |
| Test Frequency | — | 2.5 GHz |
| Paket | — | 12-VFQFN Exposed Pad (QFN-12 EP) |
| RF Type | — | WiMAX, WLAN |