MMA20312BT1 vs MMA25312BT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMA20312BT1 disebabkan oleh NXP Semiconductors dan MMA25312BT1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MMA25312BT1 MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MMA20312BT1 MMA25312BT1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Status Lingkungan Hidup Aktif Aktif
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) —
Product Type RF Linear Power Amplifier —
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
Tetstruktur 2-stage Class AB cascade 2-stage linear driver amplifier
Frequency Range 1800 MHz to 2200 MHz 2300 MHz to 2700 MHz
Small-Signal Gain 27.2 dB 26 dB
Saturated Output Power (Psat) 30.5 dBm (~1.1 W) —
Tegangan Pemberi Arus 5 V 3 V to 5 V
Supply Current (Idq) 70 mA typical —
Kemasan / Case 12-QFN (3x3 mm) with Exposed Pad —
Jenis Pemasangan Surface Mount Surface Mount
RF Input/Output Match Internal 50 ohm —
Supported RF Standards LTE, PCS, TD-SCDMA, UMTS —
Suhu Operasi [DATA_NEEDED: operating temperature range] -40 °C to +85 °C
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant (per NXP product page) Compliant
Lead-Free Yes —
Packaging Tape & Reel —
Saturated Output Power — 31 dBm (typ)
Noise Figure — 3.8 dB at 2.5 GHz
Arus Pemberi Arus — 124 mA (typ)
Test Frequency — 2.5 GHz
Kemasan — 12-VFQFN Exposed Pad (QFN-12 EP)
RF Type — WiMAX, WLAN

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