MMA25312BT1 vs MMA20312BT1 Perbandingan
Perbandingan bersamaan detil MMA25312BT1 dari NXP Semiconductors dan MMA20312BT1 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP
MMA25312BT1 ✓ AktifNXP Semiconductors
MMA20312BT1 - 2-Stage InGaP HBT Linear Amplifier, 1.8-2.2 GHz | NXP
MMA20312BT1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MMA25312BT1 | MMA20312BT1 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | InGaP HBT (Heterojunction Bipolar Transistor) | InGaP HBT (Heterojunction Bipolar Transistor) |
| Topologi | 2-stage linear driver amplifier | 2-stage Class AB cascade |
| Frequency Range | 2300 MHz to 2700 MHz | 1800 MHz to 2200 MHz |
| Small-Signal Gain | 26 dB | 27.2 dB |
| Saturated Output Power | 31 dBm (typ) | — |
| Noise Figure | 3.8 dB at 2.5 GHz | — |
| Tegangan Pemuat | 3 V to 5 V | 5 V |
| Arus Pemuat | 124 mA (typ) | — |
| Test Frequency | 2.5 GHz | — |
| Suhu Kerja | -40 °C to +85 °C | [DATA_NEEDED: operating temperature range] |
| Paket | 12-VFQFN Exposed Pad (QFN-12 EP) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| RF Type | WiMAX, WLAN | — |
| Status RoHS | Compliant | Compliant (per NXP product page) |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Product Type | — | RF Linear Power Amplifier |
| Saturated Output Power (Psat) | — | 30.5 dBm (~1.1 W) |
| Supply Current (Idq) | — | 70 mA typical |
| Paket / Case | — | 12-QFN (3x3 mm) with Exposed Pad |
| RF Input/Output Match | — | Internal 50 ohm |
| Supported RF Standards | — | LTE, PCS, TD-SCDMA, UMTS |
| Lead-Free | — | Yes |
| Packaging | — | Tape & Reel |