MMA25312BT1 vs MMA20312BT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci MMA25312BT1 disebabkan oleh NXP Semiconductors dan MMA20312BT1 disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

NXP Semiconductors
MMA25312BT1 MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 - 2.3-2.7 GHz 26 dB InGaP HBT Driver Amplifier | NXP

MMA25312BT1 ✓ Aktif

Pengandingan Spesifikasi

Parametr MMA25312BT1 MMA20312BT1
Merek NXP Semiconductors NXP Semiconductors
Kategori RF Amplifiers RF Amplifiers
Status Lingkungan Hidup Aktif Aktif
Technology InGaP HBT (Heterojunction Bipolar Transistor) InGaP HBT (Heterojunction Bipolar Transistor)
Tetstruktur 2-stage linear driver amplifier 2-stage Class AB cascade
Frequency Range 2300 MHz to 2700 MHz 1800 MHz to 2200 MHz
Small-Signal Gain 26 dB 27.2 dB
Saturated Output Power 31 dBm (typ) —
Noise Figure 3.8 dB at 2.5 GHz —
Tegangan Pemberi Arus 3 V to 5 V 5 V
Arus Pemberi Arus 124 mA (typ) —
Test Frequency 2.5 GHz —
Suhu Operasi -40 °C to +85 °C [DATA_NEEDED: operating temperature range]
Kemasan 12-VFQFN Exposed Pad (QFN-12 EP) —
Jenis Pemasangan Surface Mount Surface Mount
RF Type WiMAX, WLAN —
Status RoHS Compliant Compliant (per NXP product page)
Aras MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Product Type — RF Linear Power Amplifier
Saturated Output Power (Psat) — 30.5 dBm (~1.1 W)
Supply Current (Idq) — 70 mA typical
Kemasan / Case — 12-QFN (3x3 mm) with Exposed Pad
RF Input/Output Match — Internal 50 ohm
Supported RF Standards — LTE, PCS, TD-SCDMA, UMTS
Lead-Free — Yes
Packaging — Tape & Reel

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