STBV45-AP vs STBV45 Perbandingan

Perbandingan bersamaan detil STBV45-AP dari STMicroelectronics dan STBV45 dari STMicroelectronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum STBV45-AP STBV45
Merek STMicroelectronics STMicroelectronics
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Technology High-voltage multi-epitaxial planar, cellular emitter Multi-epitaxial planar with cellular emitter structure
Tegangan Pemisah-Penjana (Vceo) 400 V 400 V
Tegangan Dasar Pemisah (Vcbo) [DATA_NEEDED: VCBO value] 400 V
Tegangan Dasar Penjana (Vebo) [DATA_NEEDED: VEBO value] [DATA_NEEDED: VEBO rating]
Continuous Collector Current (IC) 0.75 A 750 mA
Peak Collector Current [DATA_NEEDED: ICM value] —
Total Power Dissipation (Ptot) [DATA_NEEDED: Ptot at 25C] —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/typ/max] [DATA_NEEDED: minimum hFE value]
Frekuensi Transisi (ft) [DATA_NEEDED: fT] [DATA_NEEDED: fT value]
Switching Speed Very high (fast-switching grade) —
Reverse Bias SOA Wide RBSOA per datasheet —
Paket TO-92AP (Ammopack, radial leads) TO-92-3 (through-hole)
Tipe Mounting Through-Hole (Ammopack tape) Through Hole
Rentang Suhu Kerja [DATA_NEEDED: Tj max] [DATA_NEEDED: junction temperature range]
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Power Dissipation (Pd) — 950 mW
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) — [DATA_NEEDED: VCE(sat) value]
Pinout — Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard)

Spek dan Sumber

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