STBV45-AP vs STBV45 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci STBV45-AP disebabkan oleh STMicroelectronics dan STBV45 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr STBV45-AP STBV45
Merek STMicroelectronics STMicroelectronics
Kategori Transistors Transistors
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor NPN Bipolar Junction Transistor (BJT) NPN Bipolar Junction Transistor (BJT)
Technology High-voltage multi-epitaxial planar, cellular emitter Multi-epitaxial planar with cellular emitter structure
Tegangan Pengumpul-Pemancar (Vceo) 400 V 400 V
Tegangan Pengumpul-Bas (Vcbo) [DATA_NEEDED: VCBO value] 400 V
Tegangan Pemancar-Bas (Vebo) [DATA_NEEDED: VEBO value] [DATA_NEEDED: VEBO rating]
Continuous Collector Current (IC) 0.75 A 750 mA
Peak Collector Current [DATA_NEEDED: ICM value] —
Total Power Dissipation (Ptot) [DATA_NEEDED: Ptot at 25C] —
DC Current Gain (hFE) [DATA_NEEDED: hFE min/typ/max] [DATA_NEEDED: minimum hFE value]
Frekuensi Pertukaran (ft) [DATA_NEEDED: fT] [DATA_NEEDED: fT value]
Switching Speed Very high (fast-switching grade) —
Reverse Bias SOA Wide RBSOA per datasheet —
Kemasan TO-92AP (Ammopack, radial leads) TO-92-3 (through-hole)
Jenis Pemasangan Through-Hole (Ammopack tape) Through Hole
Gambaran Suhu Operasi [DATA_NEEDED: Tj max] [DATA_NEEDED: junction temperature range]
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Power Dissipation (Pd) — 950 mW
Tegangan Pengumpul-Pemancar (Vce(sat)) — [DATA_NEEDED: VCE(sat) value]
Pinout — Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard)

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