STBV45-AP vs STBV45 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng STBV45-AP sa pamamagitan ng STMicroelectronics at STBV45 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
STMicroelectronics
STBV45-AP - 400V NPN High-Voltage Fast-Switch Transistor | STMicroelectronics
STBV45-AP ✓ NakahandaSTMicroelectronics
STBV45 - 400V NPN High-Voltage Fast-Switching BJT | STMicroelectronics
STBV45 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | STBV45-AP | STBV45 |
|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics |
| Kategorya | Transistors | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | NPN Bipolar Junction Transistor (BJT) | NPN Bipolar Junction Transistor (BJT) |
| Technology | High-voltage multi-epitaxial planar, cellular emitter | Multi-epitaxial planar with cellular emitter structure |
| Voltage ng Collector-Emitter (Vceo) | 400 V | 400 V |
| Voltage ng Collector-Base (Vcbo) | [DATA_NEEDED: VCBO value] | 400 V |
| Voltage ng Emitter-Base (Vebo) | [DATA_NEEDED: VEBO value] | [DATA_NEEDED: VEBO rating] |
| Continuous Collector Current (IC) | 0.75 A | 750 mA |
| Peak Collector Current | [DATA_NEEDED: ICM value] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot at 25C] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ/max] | [DATA_NEEDED: minimum hFE value] |
| Dalas ng Transisyon (ft) | [DATA_NEEDED: fT] | [DATA_NEEDED: fT value] |
| Switching Speed | Very high (fast-switching grade) | — |
| Reverse Bias SOA | Wide RBSOA per datasheet | — |
| Packhaging | TO-92AP (Ammopack, radial leads) | TO-92-3 (through-hole) |
| Uri ng Pagpapasok | Through-Hole (Ammopack tape) | Through Hole |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max] | [DATA_NEEDED: junction temperature range] |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Power Dissipation (Pd) | — | 950 mW |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | [DATA_NEEDED: VCE(sat) value] |
| Pinout | — | Pin 1: Emitter, Pin 2: Collector, Pin 3: Base (per TO-92 standard) |